Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser
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Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser. / Cemlyn, Ben; Adams, Mike; Harbord, Edmund; Li, Nianqiang; Henning, Ian D.; Oulton, Ruth; Korpijärvi, Ville Markus; Guina, Mircea.
julkaisussa: Semiconductor Science and Technology, Vuosikerta 33, Nro 9, 094005, 01.08.2018.Tutkimustuotos › › vertaisarvioitu
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TY - JOUR
T1 - Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser
AU - Cemlyn, Ben
AU - Adams, Mike
AU - Harbord, Edmund
AU - Li, Nianqiang
AU - Henning, Ian D.
AU - Oulton, Ruth
AU - Korpijärvi, Ville Markus
AU - Guina, Mircea
PY - 2018/8/1
Y1 - 2018/8/1
N2 - Using continuous-wave optical pumping of a spin-VCSEL at room temperature, we find high spin amplification of the pump close to threshold within the communications wavelength window, here at 1300 nm. This facilitates a strong switch from left to right circularly polarised light emission, which has potential applications in polarisation encoding for data communications. We use a simple spin flip model to fit the experimental results and discuss the VCSEL parameters that affect this amplification.
AB - Using continuous-wave optical pumping of a spin-VCSEL at room temperature, we find high spin amplification of the pump close to threshold within the communications wavelength window, here at 1300 nm. This facilitates a strong switch from left to right circularly polarised light emission, which has potential applications in polarisation encoding for data communications. We use a simple spin flip model to fit the experimental results and discuss the VCSEL parameters that affect this amplification.
KW - spin amplification
KW - spin laser
KW - spin VCSEL
U2 - 10.1088/1361-6641/aad42e
DO - 10.1088/1361-6641/aad42e
M3 - Article
VL - 33
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 9
M1 - 094005
ER -