TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Numerical simulation of temperature distributions in layered structures during laser processing

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut12-22
Sivumäärä11
JulkaisuApplied Surface Science
Vuosikerta36
Numero1-4
DOI - pysyväislinkit
TilaJulkaistu - 1989
Julkaistu ulkoisestiKyllä
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

A numerical simulation approach for the evaluation of temperature distribution in layer structured substrates during laser processing is introduced. The explicit finite-difference solution of the heat equation is used and the full non-linearity of the heat diffusion is taken into account by temperature dependent substrate parameters. The heat equations for layered structures are solved using both rectangular and cylindrical coordinate systems. The method is applied to CW Ar+ laser-induced temperature distributions in some commonly used layer structures in microelectronics, such as silicon on sapphire (SOS) and SiO2 coated silicon. Results are compared with experiments.