Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction
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Yksityiskohdat
| Alkuperäiskieli | Englanti |
|---|---|
| Artikkeli | 165311 |
| Julkaisu | Physical Review B |
| Vuosikerta | 92 |
| Numero | 16 |
| DOI - pysyväislinkit | |
| Tila | Julkaistu - 20 lokakuuta 2015 |
| OKM-julkaisutyyppi | A1 Alkuperäisartikkeli |
Tiivistelmä
Oxidation of semiconductor surfaces is known to cause defect states at oxide-semiconductor interfaces of various devices. In contrast, effects of the semiconductor interaction with non-oxygen elements at such junctions are still unclear. We present evidence for the interrelationship between a metal (non-oxygen)-semiconductor reaction and formation of the band-gap defect states at a buried oxide-semiconductor interface by investigating well-defined epitaxial BaO/Ge(100) junctions with high-resolution synchrotron-radiation photoelectron spectroscopy. The states that arise from the Ba-Ge interaction lead to Fermi-level pinning at 0.40eV above the valence band maximum, while the defect-free BaO/Ge(100) interface has a flat band structure.