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Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

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Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface : The case of epitaxial BaO/Ge(100) junction. / Kuzmin, M.; Laukkanen, P.; Yasir, M.; Mäkelä, J.; Tuominen, M.; Dahl, J.; Punkkinen, M. P. J.; Kokko, K.; Hedman, H. P.; Moon, J.; Punkkinen, R.; Polojärvi, V.; Korpijärvi, V. M.; Guina, M.

julkaisussa: Physical Review B, Vuosikerta 92, Nro 16, 165311, 20.10.2015.

Tutkimustuotosvertaisarvioitu

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Kuzmin, M, Laukkanen, P, Yasir, M, Mäkelä, J, Tuominen, M, Dahl, J, Punkkinen, MPJ, Kokko, K, Hedman, HP, Moon, J, Punkkinen, R, Polojärvi, V, Korpijärvi, VM & Guina, M 2015, 'Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction', Physical Review B, Vuosikerta. 92, Nro 16, 165311. https://doi.org/10.1103/PhysRevB.92.165311

APA

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Author

Kuzmin, M. ; Laukkanen, P. ; Yasir, M. ; Mäkelä, J. ; Tuominen, M. ; Dahl, J. ; Punkkinen, M. P. J. ; Kokko, K. ; Hedman, H. P. ; Moon, J. ; Punkkinen, R. ; Polojärvi, V. ; Korpijärvi, V. M. ; Guina, M. / Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface : The case of epitaxial BaO/Ge(100) junction. Julkaisussa: Physical Review B. 2015 ; Vuosikerta 92, Nro 16.

Bibtex - Lataa

@article{2ef2a2232a03445dba0b1340652209ce,
title = "Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction",
abstract = "Oxidation of semiconductor surfaces is known to cause defect states at oxide-semiconductor interfaces of various devices. In contrast, effects of the semiconductor interaction with non-oxygen elements at such junctions are still unclear. We present evidence for the interrelationship between a metal (non-oxygen)-semiconductor reaction and formation of the band-gap defect states at a buried oxide-semiconductor interface by investigating well-defined epitaxial BaO/Ge(100) junctions with high-resolution synchrotron-radiation photoelectron spectroscopy. The states that arise from the Ba-Ge interaction lead to Fermi-level pinning at 0.40eV above the valence band maximum, while the defect-free BaO/Ge(100) interface has a flat band structure.",
author = "M. Kuzmin and P. Laukkanen and M. Yasir and J. M{\"a}kel{\"a} and M. Tuominen and J. Dahl and Punkkinen, {M. P. J.} and K. Kokko and Hedman, {H. P.} and J. Moon and R. Punkkinen and V. Poloj{\"a}rvi and Korpij{\"a}rvi, {V. M.} and M. Guina",
note = "EXT={"}Kokko, K.{"} EXT={"}Laukkanen, P.{"} EXT={"}Kuzmin, M.{"}",
year = "2015",
month = "10",
day = "20",
doi = "10.1103/PhysRevB.92.165311",
language = "English",
volume = "92",
journal = "Physical Review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "16",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface

T2 - The case of epitaxial BaO/Ge(100) junction

AU - Kuzmin, M.

AU - Laukkanen, P.

AU - Yasir, M.

AU - Mäkelä, J.

AU - Tuominen, M.

AU - Dahl, J.

AU - Punkkinen, M. P. J.

AU - Kokko, K.

AU - Hedman, H. P.

AU - Moon, J.

AU - Punkkinen, R.

AU - Polojärvi, V.

AU - Korpijärvi, V. M.

AU - Guina, M.

N1 - EXT="Kokko, K." EXT="Laukkanen, P." EXT="Kuzmin, M."

PY - 2015/10/20

Y1 - 2015/10/20

N2 - Oxidation of semiconductor surfaces is known to cause defect states at oxide-semiconductor interfaces of various devices. In contrast, effects of the semiconductor interaction with non-oxygen elements at such junctions are still unclear. We present evidence for the interrelationship between a metal (non-oxygen)-semiconductor reaction and formation of the band-gap defect states at a buried oxide-semiconductor interface by investigating well-defined epitaxial BaO/Ge(100) junctions with high-resolution synchrotron-radiation photoelectron spectroscopy. The states that arise from the Ba-Ge interaction lead to Fermi-level pinning at 0.40eV above the valence band maximum, while the defect-free BaO/Ge(100) interface has a flat band structure.

AB - Oxidation of semiconductor surfaces is known to cause defect states at oxide-semiconductor interfaces of various devices. In contrast, effects of the semiconductor interaction with non-oxygen elements at such junctions are still unclear. We present evidence for the interrelationship between a metal (non-oxygen)-semiconductor reaction and formation of the band-gap defect states at a buried oxide-semiconductor interface by investigating well-defined epitaxial BaO/Ge(100) junctions with high-resolution synchrotron-radiation photoelectron spectroscopy. The states that arise from the Ba-Ge interaction lead to Fermi-level pinning at 0.40eV above the valence band maximum, while the defect-free BaO/Ge(100) interface has a flat band structure.

UR - http://www.scopus.com/inward/record.url?scp=84944790567&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.92.165311

DO - 10.1103/PhysRevB.92.165311

M3 - Article

VL - 92

JO - Physical Review B

JF - Physical Review B

SN - 1098-0121

IS - 16

M1 - 165311

ER -