TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry

Tutkimustuotosvertaisarvioitu

Standard

Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry. / Franta, Daniel; Kotilainen, Minna; Krumpolec, Richard; Ohlıdal, Ivan.

julkaisussa: Applied Surface Science, Vuosikerta 421, Nro B, 11.2017, s. 420-423.

Tutkimustuotosvertaisarvioitu

Harvard

Franta, D, Kotilainen, M, Krumpolec, R & Ohlıdal, I 2017, 'Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry', Applied Surface Science, Vuosikerta. 421, Nro B, Sivut 420-423. https://doi.org/10.1016/j.apsusc.2016.12.164

APA

Franta, D., Kotilainen, M., Krumpolec, R., & Ohlıdal, I. (2017). Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry. Applied Surface Science, 421(B), 420-423. https://doi.org/10.1016/j.apsusc.2016.12.164

Vancouver

Author

Franta, Daniel ; Kotilainen, Minna ; Krumpolec, Richard ; Ohlıdal, Ivan. / Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry. Julkaisussa: Applied Surface Science. 2017 ; Vuosikerta 421, Nro B. Sivut 420-423.

Bibtex - Lataa

@article{722f1feba73e46829114229353b14ca4,
title = "Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry",
abstract = "Hafnium oxide (HfO2) thin films could be potentially used as thermal diffusion barrier coatings for copper absorbers used in solar thermal collectors. Atomic layer deposition (ALD) was used to deposit thin, dense, non-columnar HfO2 films on copper sheets, which are established base materials for solar absorbers. The aim of this work is to find a simple and efficient method for quantitative characterization of thin hafnium oxide films deposited on imperfect rough copper sheets. The difference ellipsometry applied in infrared region was found to be a practical tool for non-destructive characterization of thin films deposited onto metal surfaces even when these surfaces are imperfect. The presented method enables us not only to identify the presence of hafnium oxide but also to perform quantitative characterization, i.e. to determine the thickness of the film. Moreover, a simple method, in which the thickness is determined from the height of the structure in the difference ellipsometric data, is presented. This method is demonstrated on HfO2 film with nominal thickness 60 nm deposited by ALD on copper cold-rolled sheet.",
keywords = "Hafnia, Ellipsometry, atomic layer deposition, solar absorber",
author = "Daniel Franta and Minna Kotilainen and Richard Krumpolec and Ivan Ohlıdal",
year = "2017",
month = "11",
doi = "10.1016/j.apsusc.2016.12.164",
language = "English",
volume = "421",
pages = "420--423",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "B",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry

AU - Franta, Daniel

AU - Kotilainen, Minna

AU - Krumpolec, Richard

AU - Ohlıdal, Ivan

PY - 2017/11

Y1 - 2017/11

N2 - Hafnium oxide (HfO2) thin films could be potentially used as thermal diffusion barrier coatings for copper absorbers used in solar thermal collectors. Atomic layer deposition (ALD) was used to deposit thin, dense, non-columnar HfO2 films on copper sheets, which are established base materials for solar absorbers. The aim of this work is to find a simple and efficient method for quantitative characterization of thin hafnium oxide films deposited on imperfect rough copper sheets. The difference ellipsometry applied in infrared region was found to be a practical tool for non-destructive characterization of thin films deposited onto metal surfaces even when these surfaces are imperfect. The presented method enables us not only to identify the presence of hafnium oxide but also to perform quantitative characterization, i.e. to determine the thickness of the film. Moreover, a simple method, in which the thickness is determined from the height of the structure in the difference ellipsometric data, is presented. This method is demonstrated on HfO2 film with nominal thickness 60 nm deposited by ALD on copper cold-rolled sheet.

AB - Hafnium oxide (HfO2) thin films could be potentially used as thermal diffusion barrier coatings for copper absorbers used in solar thermal collectors. Atomic layer deposition (ALD) was used to deposit thin, dense, non-columnar HfO2 films on copper sheets, which are established base materials for solar absorbers. The aim of this work is to find a simple and efficient method for quantitative characterization of thin hafnium oxide films deposited on imperfect rough copper sheets. The difference ellipsometry applied in infrared region was found to be a practical tool for non-destructive characterization of thin films deposited onto metal surfaces even when these surfaces are imperfect. The presented method enables us not only to identify the presence of hafnium oxide but also to perform quantitative characterization, i.e. to determine the thickness of the film. Moreover, a simple method, in which the thickness is determined from the height of the structure in the difference ellipsometric data, is presented. This method is demonstrated on HfO2 film with nominal thickness 60 nm deposited by ALD on copper cold-rolled sheet.

KW - Hafnia

KW - Ellipsometry

KW - atomic layer deposition

KW - solar absorber

U2 - 10.1016/j.apsusc.2016.12.164

DO - 10.1016/j.apsusc.2016.12.164

M3 - Article

VL - 421

SP - 420

EP - 423

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - B

ER -