Optical power monitors in Ge monolithically integrated on SOI chips
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Yksityiskohdat
| Alkuperäiskieli | Englanti |
|---|---|
| Sivut | 514-517 |
| Sivumäärä | 4 |
| Julkaisu | Microelectronic Engineering |
| Vuosikerta | 88 |
| Numero | 4 |
| DOI - pysyväislinkit | |
| Tila | Julkaistu - huhtikuuta 2011 |
| OKM-julkaisutyyppi | A1 Alkuperäisartikkeli |
Tiivistelmä
We report on the fabrication and operation of optical power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide pn heterojunction photodiodes in evaporated germanium. The low temperature growth of Ge is compatible with silicon waveguide technology. The photodetectors exhibit typical responsivities of 10-30 mA/W; the power monitors are used with front-end trans-impedance amplifiers based on commercially available operational amplifiers and can operate with optical signals as small as 10 nW, with errors below 0.2% and 2% at 1 and 0.1 μW, respectively.