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Optimization of photogenerated charge carrier lifetimes in ald grown tio2 for photonic applications

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Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli1567
Sivumäärä9
JulkaisuNanomaterials
Vuosikerta10
Numero8
DOI - pysyväislinkit
TilaJulkaistu - 10 elokuuta 2020
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

Titanium dioxide (TiO2) thin films are widely employed for photocatalytic and photovoltaic applications where the long lifetime of charge carriers is a paramount requirement for the device efficiency. To ensure the long lifetime, a high temperature treatment is used which restricts the applicability of TiO2 in devices incorporating organic or polymer components. In this study, we exploited low temperature (100–150 C) atomic layer deposition (ALD) of 30 nm TiO2 thin films from tetrakis(dimethylamido)titanium. The deposition was followed by a heat treatment in air to find the minimum temperature requirements for the film fabrication without compromising the carrier lifetime. Femto-to nanosecond transient absorption spectroscopy was used to determine the lifetimes, and grazing incidence X-ray diffraction was employed for structural analysis. The optimal result was obtained for the TiO2 thin films grown at 150 C and heat-treated at as low as 300 C. The deposited thin films were amorphous and crystallized into anatase phase upon heat treatment at 300–500 C. The average carrier lifetime for amorphous TiO2 is few picoseconds but increases to >400 ps upon crystallization at 500 C. The samples deposited at 100 C were also crystallized as anatase but the carrier lifetime was <100 ps.

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