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Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

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Yksityiskohdat

AlkuperäiskieliEnglanti
Otsikko11th European Space Power Conference, 3-7 October 2016 Thessaloniki, Greece
KustantajaEDP Sciences
DOI - pysyväislinkit
TilaJulkaistu - 2017
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
TapahtumaEuropean Space Power Conference -
Kesto: 1 tammikuuta 2000 → …

Julkaisusarja

NimiE3S Web of Conferences
Vuosikerta16
ISSN (elektroninen)2267-1242

Conference

ConferenceEuropean Space Power Conference
Ajanjakso1/01/00 → …

Tiivistelmä

Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

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