TUTCRIS - Tampereen teknillinen yliopisto


Performance and lifetime of high-power narrow-linewidth 1180 nm GaInNAs DBR-LDs

Tutkimustuotos: Konferenssiesitys, posteri tai abstrakti


DOI - pysyväislinkit
TilaJulkaistu - 2017
OKM-julkaisutyyppiEi OKM-tyyppiä
TapahtumaCLEO/Europe-EQEC 2017 - Munich, Saksa
Kesto: 25 kesäkuuta 201729 kesäkuuta 2017


ConferenceCLEO/Europe-EQEC 2017


We report the highest power narrow spectrum 1180 nm distributed Bragg reflector (DBR) laser diodes prepared using GaInNAs quantum wells as a gain material. In particular, we demonstrate a CW output power up to 560 mW from Ridge Waveguide (RWG)-DBR laser diodes and up to 2.75W for Tapered DBR-LDs. The demonstration targets applications in second harmonic generation (SHG) for generating high brightness yellow radiation. RWG-DBR LDs are optimal light sources for waveguide SHG-crystals allowing high efficiency coupling to single mode WG embedded in the SHG-crystal. On the other hand, tapered DBR-LDs provide a power level that suitable for bulk SHG-crystals that can withstand more IR-light and alleviate the need for waveguide alignment. To reach the 1180 nm range we have developed high-quality GaInNAs quantum wells embedded in GaAs waveguide, a material system that has been in the past recognized for poor reliability in laser operation. In our case, preliminary lifetime test for GaInNAs RWG-DBR LDs showed no signs of degradation in a room-temperature operation for over 2000hours under high current driving at 1500 mA drive-current.

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