TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Quantum dot spontaneous emission control in a ridge waveguide

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli041112
JulkaisuApplied Physics Letters
Vuosikerta106
Numero4
DOI - pysyväislinkit
TilaJulkaistu - 26 tammikuuta 2015
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

We investigate the spontaneous emission (SE) of self-assembled InAs quantum dots (QDs) embedded in GaAs ridge waveguides that lay on a low index substrate. In thin enough waveguides, the coupling to the fundamental guided mode is vanishingly small. A pronounced anisotropy in the coupling to non-guided modes is then directly evidenced by normal-incidence photoluminescence polarization measurements. In this regime, a measurement of the QD decay rate reveals a SE inhibition by a factor up to 4. In larger wires, which ensure an optimal transverse confinement of the fundamental guided mode, the decay rate approaches the bulk value. Building on the good agreement with theoretical predictions, we infer from calculations the fraction β of SE coupled to the fundamental guided mode for some important QD excitonic complexes. For a charged exciton (isotropic in plane optical dipole), β reaches 0.61 at maximum for an on-axis QD. In the case of a purely transverse linear optical dipole, β increases up to 0.91. This optimal configuration is achievable through the selective excitation of one of the bright neutral excitons.

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