Rapid, Brushless Self-assembly of a PS-b-PDMS Block Copolymer for Nanolithography
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Yksityiskohdat
| Alkuperäiskieli | Englanti |
|---|---|
| Sivut | 1-5 |
| Sivumäärä | 5 |
| Julkaisu | Colloids and Interface Science Communications |
| Vuosikerta | 2 |
| DOI - pysyväislinkit | |
| Tila | Julkaistu - 1 lokakuuta 2014 |
| OKM-julkaisutyyppi | A1 Alkuperäisartikkeli |
Tiivistelmä
Block copolymers (BCP) are highly promising self-assembling precursors for scalable nanolithography. Very regular BCP nanopatterns can be used as on-chip etch masks. The first step in the processing of BCP thin films is usually the chemical modification of the substrate surface, typically by grafting of a brush layer that renders the surface energy neutral relative to the constituent blocks. We provide here a first study on rapid, low temperature self-assembly of PS-. b-PDMS (polystyrene-. block-polydimethylsiloxane) on silicon substrates without a brush layer. We show that it forms line and antidot patterns after short solvo-thermal annealing. Unlike previous reports on this system, low temperature and short annealing time provide self-assembly in homogeneous thin films covering large substrate areas. This on-chip mask was then used for pattern transfer to the underlying silicon substrate. SEM (scanning electron microscope) images reveal silicon nanowires relative to the PDMS patterns of the BCP mask.