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Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

Tutkimustuotosvertaisarvioitu

Standard

Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband. / Sirbu, A.; Rantamäki, A.; Iakolev, V.; Mereuta, A.; Caliman, A.; Volet, N.; Lyytikäinen, J.; Okhotnikov, O.; Kapon, E.

Proceedings of SPIE vol. 8966, 2014.. toim. / M Guina. BELLINGHAM : SPIE, 2015. (Proceedings of SPIE; Vuosikerta 9349).

Tutkimustuotosvertaisarvioitu

Harvard

Sirbu, A, Rantamäki, A, Iakolev, V, Mereuta, A, Caliman, A, Volet, N, Lyytikäinen, J, Okhotnikov, O & Kapon, E 2015, Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband. julkaisussa M Guina (Toimittaja), Proceedings of SPIE vol. 8966, 2014.. Proceedings of SPIE, Vuosikerta. 9349, SPIE, BELLINGHAM, Iso-Britannia, 1/01/15. https://doi.org/10.1117/12.2079752

APA

Sirbu, A., Rantamäki, A., Iakolev, V., Mereuta, A., Caliman, A., Volet, N., ... Kapon, E. (2015). Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband. teoksessa M. Guina (Toimittaja), Proceedings of SPIE vol. 8966, 2014. (Proceedings of SPIE; Vuosikerta 9349). BELLINGHAM: SPIE. https://doi.org/10.1117/12.2079752

Vancouver

Sirbu A, Rantamäki A, Iakolev V, Mereuta A, Caliman A, Volet N et al. Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband. julkaisussa Guina M, toimittaja, Proceedings of SPIE vol. 8966, 2014.. BELLINGHAM: SPIE. 2015. (Proceedings of SPIE). https://doi.org/10.1117/12.2079752

Author

Sirbu, A. ; Rantamäki, A. ; Iakolev, V. ; Mereuta, A. ; Caliman, A. ; Volet, N. ; Lyytikäinen, J. ; Okhotnikov, O. ; Kapon, E. / Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband. Proceedings of SPIE vol. 8966, 2014.. Toimittaja / M Guina. BELLINGHAM : SPIE, 2015. (Proceedings of SPIE).

Bibtex - Lataa

@inproceedings{72ee4734ad2b44308922972f741ec73c,
title = "Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband",
abstract = "Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors that implement both heat-dissipation schemes applied to the same fused gain mirror structure. We demonstrate record high output powers of 7.1 W in the intra-cavity diamond heat-spreader configuration and 6.5 W in the flip-chip heat dissipation scheme. These improvements are achieved due to optimization of the wafer fused gain mirror structure based on AlGaInAs/InP-active region fused to AlAs-GaAs distributed Bragg reflector (DBR) and application of efficient methods of bonding semiconductor gain mirror chips to diamond heatspreaders.",
keywords = "Wafer-fused vertical-external-cavity surface-emitting lasers (VECSELs), wafer-fused gain mirrors, optically pumped VECSELs, photonics technology, SEMICONDUCTOR DISK LASER",
author = "A. Sirbu and A. Rantam{\"a}ki and V. Iakolev and A. Mereuta and A. Caliman and N. Volet and J. Lyytik{\"a}inen and O. Okhotnikov and E. Kapon",
year = "2015",
doi = "10.1117/12.2079752",
language = "English",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "M Guina",
booktitle = "Proceedings of SPIE vol. 8966, 2014.",
address = "United States",

}

RIS (suitable for import to EndNote) - Lataa

TY - GEN

T1 - Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

AU - Sirbu, A.

AU - Rantamäki, A.

AU - Iakolev, V.

AU - Mereuta, A.

AU - Caliman, A.

AU - Volet, N.

AU - Lyytikäinen, J.

AU - Okhotnikov, O.

AU - Kapon, E.

PY - 2015

Y1 - 2015

N2 - Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors that implement both heat-dissipation schemes applied to the same fused gain mirror structure. We demonstrate record high output powers of 7.1 W in the intra-cavity diamond heat-spreader configuration and 6.5 W in the flip-chip heat dissipation scheme. These improvements are achieved due to optimization of the wafer fused gain mirror structure based on AlGaInAs/InP-active region fused to AlAs-GaAs distributed Bragg reflector (DBR) and application of efficient methods of bonding semiconductor gain mirror chips to diamond heatspreaders.

AB - Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors that implement both heat-dissipation schemes applied to the same fused gain mirror structure. We demonstrate record high output powers of 7.1 W in the intra-cavity diamond heat-spreader configuration and 6.5 W in the flip-chip heat dissipation scheme. These improvements are achieved due to optimization of the wafer fused gain mirror structure based on AlGaInAs/InP-active region fused to AlAs-GaAs distributed Bragg reflector (DBR) and application of efficient methods of bonding semiconductor gain mirror chips to diamond heatspreaders.

KW - Wafer-fused vertical-external-cavity surface-emitting lasers (VECSELs)

KW - wafer-fused gain mirrors

KW - optically pumped VECSELs

KW - photonics technology

KW - SEMICONDUCTOR DISK LASER

U2 - 10.1117/12.2079752

DO - 10.1117/12.2079752

M3 - Conference contribution

T3 - Proceedings of SPIE

BT - Proceedings of SPIE vol. 8966, 2014.

A2 - Guina, M

PB - SPIE

CY - BELLINGHAM

ER -