Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers
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Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers. / Zhang, G.; Ovctchinnikov, A.; Pessa, M.
julkaisussa: Journal of Crystal Growth, Vuosikerta 127, 1993, s. 209-212.Tutkimustuotos › › vertaisarvioitu
Harvard
Zhang, G, Ovctchinnikov, A & Pessa, M 1993, 'Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers', Journal of Crystal Growth, Vuosikerta. 127, Sivut 209-212.
APA
Zhang, G., Ovctchinnikov, A., & Pessa, M. (1993). Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers. Journal of Crystal Growth, 127, 209-212.
Vancouver
Zhang G, Ovctchinnikov A, Pessa M. Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers. Journal of Crystal Growth. 1993;127:209-212.
Author
Bibtex - Lataa
@article{7e5273325d894b5c8a2b7c99b2f95d2f,
title = "Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers",
author = "G. Zhang and A. Ovctchinnikov and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1993",
language = "English",
volume = "127",
pages = "209--212",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
}
RIS (suitable for import to EndNote) - Lataa
TY - JOUR
T1 - Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers
AU - Zhang, G.
AU - Ovctchinnikov, A.
AU - Pessa, M.
N1 - Contribution: organisation=fys,FACT1=1
PY - 1993
Y1 - 1993
M3 - Article
VL - 127
SP - 209
EP - 212
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -