TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells

Tutkimustuotos: Konferenssiesitys, posteri tai abstrakti

Yksityiskohdat

AlkuperäiskieliEnglanti
DOI - pysyväislinkit
TilaJulkaistu - 2003
Julkaistu ulkoisestiKyllä
TapahtumaIEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003 -
Kesto: 14 lokakuuta 200316 lokakuuta 2003

Conference

ConferenceIEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003
Ajanjakso14/10/0316/10/03

Tiivistelmä

A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.