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Soft graphoepitaxy for large area directed self-assembly of polystyrene-block-poly(dimethylsiloxane) block copolymer on nanopatterned poss substrates fabricated by nanoimprint lithography

Tutkimustuotosvertaisarvioitu

Standard

Soft graphoepitaxy for large area directed self-assembly of polystyrene-block-poly(dimethylsiloxane) block copolymer on nanopatterned poss substrates fabricated by nanoimprint lithography. / Borah, Dipu; Rasappa, Sozaraj; Salaun, Mathieu; Zellsman, Marc; Lorret, Olivier; Liontos, George; Ntetsikas, Konstantinos; Avgeropoulos, Apostolos; Morris, Michael A.

julkaisussa: Advanced Functional Materials, Vuosikerta 25, Nro 22, 01.06.2015, s. 3425-3432.

Tutkimustuotosvertaisarvioitu

Harvard

Borah, D, Rasappa, S, Salaun, M, Zellsman, M, Lorret, O, Liontos, G, Ntetsikas, K, Avgeropoulos, A & Morris, MA 2015, 'Soft graphoepitaxy for large area directed self-assembly of polystyrene-block-poly(dimethylsiloxane) block copolymer on nanopatterned poss substrates fabricated by nanoimprint lithography', Advanced Functional Materials, Vuosikerta. 25, Nro 22, Sivut 3425-3432. https://doi.org/10.1002/adfm.201500100

APA

Borah, D., Rasappa, S., Salaun, M., Zellsman, M., Lorret, O., Liontos, G., ... Morris, M. A. (2015). Soft graphoepitaxy for large area directed self-assembly of polystyrene-block-poly(dimethylsiloxane) block copolymer on nanopatterned poss substrates fabricated by nanoimprint lithography. Advanced Functional Materials, 25(22), 3425-3432. https://doi.org/10.1002/adfm.201500100

Vancouver

Author

Borah, Dipu ; Rasappa, Sozaraj ; Salaun, Mathieu ; Zellsman, Marc ; Lorret, Olivier ; Liontos, George ; Ntetsikas, Konstantinos ; Avgeropoulos, Apostolos ; Morris, Michael A. / Soft graphoepitaxy for large area directed self-assembly of polystyrene-block-poly(dimethylsiloxane) block copolymer on nanopatterned poss substrates fabricated by nanoimprint lithography. Julkaisussa: Advanced Functional Materials. 2015 ; Vuosikerta 25, Nro 22. Sivut 3425-3432.

Bibtex - Lataa

@article{de06409ba6224a619b1a8a5dd14ccba2,
title = "Soft graphoepitaxy for large area directed self-assembly of polystyrene-block-poly(dimethylsiloxane) block copolymer on nanopatterned poss substrates fabricated by nanoimprint lithography",
abstract = "Polyhedral oligomeric silsequioxane (POSS) derivatives have been successfully employed as substrates for graphoepitaxial directed self-assembly (DSA) of block copolymers (BCPs). Tailored POSS materials of tuned surface chemistry are subject to nanoimprint lithography (NIL) resulting in topographically patterned substrates with dimensions commensurate with the BCP block length. A cylinder forming polystyrene-block-polydimethylsiloxane (PS-b-PDMS) BCP is synthesized by sequential living anionic polymerization of styrene and hexamethylcyclotrisiloxane. The patterned POSS materials provide a surface chemistry and topography for DSA of this BCP and after solvent annealing the BCP shows well-ordered microphase segregation. The orientation of the PDMS cylinders to the substrate plane could be controlled within the trench walls by the choice of the POSS materials. The BCP patterns are successfully used as on-chip etch mask to transfer the pattern to underlying silicon substrate. This soft graphoepitaxy method shows highly promising results as a means to generate lithographic quality patterns by nonconventional methods and could be applied to both hard and soft substrates. The methodology might have application in several fields including device and interconnect fabrication, nanoimprint lithography stamp production, nanofluidic devices, lab-on-chip, or in other technologies requiring simple nanodimensional patterns. A methodology for fabricating highly ordered silicon nanostructures at a substrate is reported using nanoimprint lithography imprinted polyhedral oligomeric silsequioxane (POSS) substrates for graphoepitaxial directed self-assembly (DSA) of block copolymer (BCP). The patterned POSS materials provide a surface chemistry and topography for DSA of a cylinder forming polystyrene-block-polydimethylsiloxane BCP with well-ordered microphase segregation upon solvent annealing.",
keywords = "block copolymer, directed self-assembly, nanoimprint lithography, pattern transfer, polyhedral oligomeric silsequioxane (POSS)",
author = "Dipu Borah and Sozaraj Rasappa and Mathieu Salaun and Marc Zellsman and Olivier Lorret and George Liontos and Konstantinos Ntetsikas and Apostolos Avgeropoulos and Morris, {Michael A.}",
year = "2015",
month = "6",
day = "1",
doi = "10.1002/adfm.201500100",
language = "English",
volume = "25",
pages = "3425--3432",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "WILEY-V C H VERLAG GMBH",
number = "22",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Soft graphoepitaxy for large area directed self-assembly of polystyrene-block-poly(dimethylsiloxane) block copolymer on nanopatterned poss substrates fabricated by nanoimprint lithography

AU - Borah, Dipu

AU - Rasappa, Sozaraj

AU - Salaun, Mathieu

AU - Zellsman, Marc

AU - Lorret, Olivier

AU - Liontos, George

AU - Ntetsikas, Konstantinos

AU - Avgeropoulos, Apostolos

AU - Morris, Michael A.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Polyhedral oligomeric silsequioxane (POSS) derivatives have been successfully employed as substrates for graphoepitaxial directed self-assembly (DSA) of block copolymers (BCPs). Tailored POSS materials of tuned surface chemistry are subject to nanoimprint lithography (NIL) resulting in topographically patterned substrates with dimensions commensurate with the BCP block length. A cylinder forming polystyrene-block-polydimethylsiloxane (PS-b-PDMS) BCP is synthesized by sequential living anionic polymerization of styrene and hexamethylcyclotrisiloxane. The patterned POSS materials provide a surface chemistry and topography for DSA of this BCP and after solvent annealing the BCP shows well-ordered microphase segregation. The orientation of the PDMS cylinders to the substrate plane could be controlled within the trench walls by the choice of the POSS materials. The BCP patterns are successfully used as on-chip etch mask to transfer the pattern to underlying silicon substrate. This soft graphoepitaxy method shows highly promising results as a means to generate lithographic quality patterns by nonconventional methods and could be applied to both hard and soft substrates. The methodology might have application in several fields including device and interconnect fabrication, nanoimprint lithography stamp production, nanofluidic devices, lab-on-chip, or in other technologies requiring simple nanodimensional patterns. A methodology for fabricating highly ordered silicon nanostructures at a substrate is reported using nanoimprint lithography imprinted polyhedral oligomeric silsequioxane (POSS) substrates for graphoepitaxial directed self-assembly (DSA) of block copolymer (BCP). The patterned POSS materials provide a surface chemistry and topography for DSA of a cylinder forming polystyrene-block-polydimethylsiloxane BCP with well-ordered microphase segregation upon solvent annealing.

AB - Polyhedral oligomeric silsequioxane (POSS) derivatives have been successfully employed as substrates for graphoepitaxial directed self-assembly (DSA) of block copolymers (BCPs). Tailored POSS materials of tuned surface chemistry are subject to nanoimprint lithography (NIL) resulting in topographically patterned substrates with dimensions commensurate with the BCP block length. A cylinder forming polystyrene-block-polydimethylsiloxane (PS-b-PDMS) BCP is synthesized by sequential living anionic polymerization of styrene and hexamethylcyclotrisiloxane. The patterned POSS materials provide a surface chemistry and topography for DSA of this BCP and after solvent annealing the BCP shows well-ordered microphase segregation. The orientation of the PDMS cylinders to the substrate plane could be controlled within the trench walls by the choice of the POSS materials. The BCP patterns are successfully used as on-chip etch mask to transfer the pattern to underlying silicon substrate. This soft graphoepitaxy method shows highly promising results as a means to generate lithographic quality patterns by nonconventional methods and could be applied to both hard and soft substrates. The methodology might have application in several fields including device and interconnect fabrication, nanoimprint lithography stamp production, nanofluidic devices, lab-on-chip, or in other technologies requiring simple nanodimensional patterns. A methodology for fabricating highly ordered silicon nanostructures at a substrate is reported using nanoimprint lithography imprinted polyhedral oligomeric silsequioxane (POSS) substrates for graphoepitaxial directed self-assembly (DSA) of block copolymer (BCP). The patterned POSS materials provide a surface chemistry and topography for DSA of a cylinder forming polystyrene-block-polydimethylsiloxane BCP with well-ordered microphase segregation upon solvent annealing.

KW - block copolymer

KW - directed self-assembly

KW - nanoimprint lithography

KW - pattern transfer

KW - polyhedral oligomeric silsequioxane (POSS)

UR - http://www.scopus.com/inward/record.url?scp=84930932614&partnerID=8YFLogxK

U2 - 10.1002/adfm.201500100

DO - 10.1002/adfm.201500100

M3 - Article

VL - 25

SP - 3425

EP - 3432

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 22

ER -