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Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy

Tutkimustuotosvertaisarvioitu

Standard

Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy. / Zhang, G.; Ovtchinnikov, A.

julkaisussa: Applied Physics Letters, Vuosikerta 62, 1993, s. 1644-1646.

Tutkimustuotosvertaisarvioitu

Harvard

Zhang, G & Ovtchinnikov, A 1993, 'Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy', Applied Physics Letters, Vuosikerta. 62, Sivut 1644-1646.

APA

Vancouver

Author

Zhang, G. ; Ovtchinnikov, A. / Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy. Julkaisussa: Applied Physics Letters. 1993 ; Vuosikerta 62. Sivut 1644-1646.

Bibtex - Lataa

@article{d0587ef798884ad4ac49e3b7c722c566,
title = "Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy",
author = "G. Zhang and A. Ovtchinnikov",
note = "Contribution: organisation=fys,FACT1=1",
year = "1993",
language = "English",
volume = "62",
pages = "1644--1646",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda~0.98 myym) grown by gas-source molecular beam epitaxy

AU - Zhang, G.

AU - Ovtchinnikov, A.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1993

Y1 - 1993

M3 - Article

VL - 62

SP - 1644

EP - 1646

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -