TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Studies of III-V Semiconductors: From Surface Reconstructions to Quantum Nanostructures

Tutkimustuotos

Yksityiskohdat

AlkuperäiskieliEnglanti
KustantajaTampere University of Technology
Sivumäärä46
ISBN (elektroninen)978-952-15-2264-2
ISBN (painettu)978-952-15-2219-2
TilaJulkaistu - 25 syyskuuta 2009
OKM-julkaisutyyppiG5 Artikkeliväitöskirja

Julkaisusarja

NimiTampere University of Technology. Publication
KustantajaTampere University of Technology
Vuosikerta830
ISSN (painettu)1459-2045

Tiivistelmä

In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.

Latausten tilastot

Ei tietoja saatavilla