Surface doping of GaxIn1−xAs semiconductor crystals with magnesium

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Surface doping of GaxIn1−xAs semiconductor crystals with magnesium. / Yasir, M.; Mäkelä, J.; Koiva, D.; Tuominen, M.; Dahl, J.; Lehtiö, J.-P.; Kuzmin, M.; Rad, Z. Jahanshah; Punkkinen, M.; Laukkanen, P.; Kokko, K.; Polojärvi, V.; Lyytikäinen, J.; Tukiainen, A.; Guina, M.

julkaisussa: Materialia, Vuosikerta 2, 10.2018, s. 33-36.

Tutkimustuotos › › vertaisarvioitu

Harvard

Yasir, M, Mäkelä, J, Koiva, D, Tuominen, M, Dahl, J, Lehtiö, J-P, Kuzmin, M, Rad, ZJ, Punkkinen, M, Laukkanen, P, Kokko, K, Polojärvi, V , Lyytikäinen, J , Tukiainen, A & Guina, M 2018, 'Surface doping of GaxIn1−xAs semiconductor crystals with magnesium', Materialia, Vuosikerta. 2, Sivut 33-36. https://doi.org/10.1016/j.mtla.2018.05.008

APA

Yasir, M., Mäkelä, J., Koiva, D., Tuominen, M., Dahl, J., Lehtiö, J-P., ... Guina, M. (2018). Surface doping of GaxIn1−xAs semiconductor crystals with magnesium. Materialia, 2, 33-36. https://doi.org/10.1016/j.mtla.2018.05.008

Vancouver

Yasir M, Mäkelä J, Koiva D, Tuominen M, Dahl J, Lehtiö J-P et al. Surface doping of GaxIn1−xAs semiconductor crystals with magnesium. Materialia. 2018 loka;2:33-36. https://doi.org/10.1016/j.mtla.2018.05.008

Author

Yasir, M. ; Mäkelä, J. ; Koiva, D. ; Tuominen, M. ; Dahl, J. ; Lehtiö, J.-P. ; Kuzmin, M. ; Rad, Z. Jahanshah ; Punkkinen, M. ; Laukkanen, P. ; Kokko, K. ; Polojärvi, V. ; Lyytikäinen, J. ; Tukiainen, A. ; Guina, M. / Surface doping of GaxIn1−xAs semiconductor crystals with magnesium. Julkaisussa: Materialia. 2018 ; Vuosikerta 2. Sivut 33-36.

Bibtex - Lataa

@article{d6e50bd8386146ff9234dbe56eb52a07,

title = "Surface doping of GaxIn1−xAs semiconductor crystals with magnesium",

abstract = "Effects of magnesium (Mg) alloying of GaxIn1−xAs(100) semiconductor surfaces have been investigated by low-energy electron diffraction, scanning tunneling microscopy/spectroscopy, and responsivity analysis of an infrared-detector component. In particular, the formation of an unusual Mg-induced (2 × 1) structure on GaAs(100) surfaces is found when depositing 1–3 monolayers of Mg on a cleaned GaAs(100) surface followed by annealing the sample in vacuum conditions at up to 500 °C. Concomitantly, the spectroscopy data show that the Fermi-level shifts toward valence band at the surface, indicating p-type doping of a surface part of GaAs due to Mg incorporation into the semiconductor. This surface-doping effect is also present in a test GaxIn1−xAs infrared detector, leading to increase in the detector responsivity. This beneficial effect of Mg-induced p-type doping is explained by a band-bending induced transfer of electrons away from a defect-rich top interface.",

keywords = "GaAs, Mg-induced reconstruction, Surface doping, STM, Infrared detector",

author = "M. Yasir and J. M{\"a}kel{\"a} and D. Koiva and M. Tuominen and J. Dahl and J.-P. Lehti{\"o} and M. Kuzmin and Rad, {Z. Jahanshah} and M. Punkkinen and P. Laukkanen and K. Kokko and V. Poloj{\"a}rvi and J. Lyytik{\"a}inen and A. Tukiainen and M. Guina",

note = "EXT={"}M{\"a}kel{\"a}, J.{"} EXT={"}Tuominen, M.{"} EXT={"}Kuzmin, M.{"} EXT={"}Laukkanen, P.{"} EXT={"}Kokko, K.{"}",

year = "2018",

month = "10",

doi = "10.1016/j.mtla.2018.05.008",

language = "English",

volume = "2",

pages = "33--36",

journal = "Materialia",

issn = "2589-1529",

publisher = "Elsevier BV",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Surface doping of GaxIn1−xAs semiconductor crystals with magnesium

AU - Yasir, M.

AU - Mäkelä, J.

AU - Koiva, D.

AU - Tuominen, M.

AU - Dahl, J.

AU - Lehtiö, J.-P.

AU - Kuzmin, M.

AU - Rad, Z. Jahanshah

AU - Punkkinen, M.

AU - Laukkanen, P.

AU - Kokko, K.

AU - Polojärvi, V.

AU - Lyytikäinen, J.

AU - Tukiainen, A.

AU - Guina, M.

N1 - EXT="Mäkelä, J." EXT="Tuominen, M." EXT="Kuzmin, M." EXT="Laukkanen, P." EXT="Kokko, K."

PY - 2018/10

Y1 - 2018/10

N2 - Effects of magnesium (Mg) alloying of GaxIn1−xAs(100) semiconductor surfaces have been investigated by low-energy electron diffraction, scanning tunneling microscopy/spectroscopy, and responsivity analysis of an infrared-detector component. In particular, the formation of an unusual Mg-induced (2 × 1) structure on GaAs(100) surfaces is found when depositing 1–3 monolayers of Mg on a cleaned GaAs(100) surface followed by annealing the sample in vacuum conditions at up to 500 °C. Concomitantly, the spectroscopy data show that the Fermi-level shifts toward valence band at the surface, indicating p-type doping of a surface part of GaAs due to Mg incorporation into the semiconductor. This surface-doping effect is also present in a test GaxIn1−xAs infrared detector, leading to increase in the detector responsivity. This beneficial effect of Mg-induced p-type doping is explained by a band-bending induced transfer of electrons away from a defect-rich top interface.

AB - Effects of magnesium (Mg) alloying of GaxIn1−xAs(100) semiconductor surfaces have been investigated by low-energy electron diffraction, scanning tunneling microscopy/spectroscopy, and responsivity analysis of an infrared-detector component. In particular, the formation of an unusual Mg-induced (2 × 1) structure on GaAs(100) surfaces is found when depositing 1–3 monolayers of Mg on a cleaned GaAs(100) surface followed by annealing the sample in vacuum conditions at up to 500 °C. Concomitantly, the spectroscopy data show that the Fermi-level shifts toward valence band at the surface, indicating p-type doping of a surface part of GaAs due to Mg incorporation into the semiconductor. This surface-doping effect is also present in a test GaxIn1−xAs infrared detector, leading to increase in the detector responsivity. This beneficial effect of Mg-induced p-type doping is explained by a band-bending induced transfer of electrons away from a defect-rich top interface.

KW - GaAs, Mg-induced reconstruction, Surface doping, STM, Infrared detector

U2 - 10.1016/j.mtla.2018.05.008

DO - 10.1016/j.mtla.2018.05.008

M3 - Article

VL - 2

SP - 33

EP - 36

JO - Materialia

JF - Materialia

SN - 2589-1529

ER -

TUTCRIS