TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

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Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli050001
JulkaisuAIP Conference Proceedings
Vuosikerta1679
DOI - pysyväislinkit
TilaJulkaistu - 2015
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37-39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be-7.5mV/°C, 0.040mA/cm2/°C, and-0.09%/°C, respectively.

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