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Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers

Tutkimustuotosvertaisarvioitu

Standard

Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers. / Zhang, G.; Näppi, J.; Asonen, H.; Pessa, M.

julkaisussa: IEEE Photonics Technology Letters, Vuosikerta 6, 1994, s. 1-3.

Tutkimustuotosvertaisarvioitu

Harvard

Zhang, G, Näppi, J, Asonen, H & Pessa, M 1994, 'Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers', IEEE Photonics Technology Letters, Vuosikerta. 6, Sivut 1-3.

APA

Zhang, G., Näppi, J., Asonen, H., & Pessa, M. (1994). Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers. IEEE Photonics Technology Letters, 6, 1-3.

Vancouver

Zhang G, Näppi J, Asonen H, Pessa M. Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers. IEEE Photonics Technology Letters. 1994;6:1-3.

Author

Zhang, G. ; Näppi, J. ; Asonen, H. ; Pessa, M. / Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers. Julkaisussa: IEEE Photonics Technology Letters. 1994 ; Vuosikerta 6. Sivut 1-3.

Bibtex - Lataa

@article{4c87eb9439f24a509cf0b96db6d5ad9e,
title = "Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers",
author = "G. Zhang and J. N{\"a}ppi and H. Asonen and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1994",
language = "English",
volume = "6",
pages = "1--3",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers

AU - Zhang, G.

AU - Näppi, J.

AU - Asonen, H.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1994

Y1 - 1994

M3 - Article

VL - 6

SP - 1

EP - 3

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

ER -