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Tuning PDMS brush chemistry by UV-O3 exposure for PS-b-PDMS microphase separation and directed self-assembly

Tutkimustuotosvertaisarvioitu

Standard

Tuning PDMS brush chemistry by UV-O3 exposure for PS-b-PDMS microphase separation and directed self-assembly. / Borah, Dipu; Rasappa, Sozaraj; Senthamaraikannan, Ramsankar; Holmes, Justin D.; Morris, Michael A.

julkaisussa: Langmuir, Vuosikerta 29, Nro 28, 16.07.2013, s. 8959-8968.

Tutkimustuotosvertaisarvioitu

Harvard

Borah, D, Rasappa, S, Senthamaraikannan, R, Holmes, JD & Morris, MA 2013, 'Tuning PDMS brush chemistry by UV-O3 exposure for PS-b-PDMS microphase separation and directed self-assembly', Langmuir, Vuosikerta. 29, Nro 28, Sivut 8959-8968. https://doi.org/10.1021/la401561k

APA

Borah, D., Rasappa, S., Senthamaraikannan, R., Holmes, J. D., & Morris, M. A. (2013). Tuning PDMS brush chemistry by UV-O3 exposure for PS-b-PDMS microphase separation and directed self-assembly. Langmuir, 29(28), 8959-8968. https://doi.org/10.1021/la401561k

Vancouver

Borah D, Rasappa S, Senthamaraikannan R, Holmes JD, Morris MA. Tuning PDMS brush chemistry by UV-O3 exposure for PS-b-PDMS microphase separation and directed self-assembly. Langmuir. 2013 heinä 16;29(28):8959-8968. https://doi.org/10.1021/la401561k

Author

Borah, Dipu ; Rasappa, Sozaraj ; Senthamaraikannan, Ramsankar ; Holmes, Justin D. ; Morris, Michael A. / Tuning PDMS brush chemistry by UV-O3 exposure for PS-b-PDMS microphase separation and directed self-assembly. Julkaisussa: Langmuir. 2013 ; Vuosikerta 29, Nro 28. Sivut 8959-8968.

Bibtex - Lataa

@article{259a087ce1dd42f88acd9ebdea52967a,
title = "Tuning PDMS brush chemistry by UV-O3 exposure for PS-b-PDMS microphase separation and directed self-assembly",
abstract = "The directed self-assembly (DSA) of block copolymer (BCP) thin films could enable a scalable, bottom-up alternative to photolithography for the generation of substrate features. The PS-b-PDMS (polystyrene-b-polydimethylsiloxane) system is attractive as it can be extended toward very small feature sizes as well as having two blocks that can be readily differentiated during pattern transfer. However, PS-b-PDMS offers a considerable challenge because of the chemical differences in the blocks which lead to poor surface-wetting, poor pattern orientation control, and structural instabilities. These challenges can be mitigated by careful definition of the interface chemistry between the substrate and the BCP. Here, we report controlled pattern formation in cylinder forming PS-b-PDMS system by use of a carefully controlled PDMS brush. Control of the brush was achieved using exposure to UV-O3 for varying time. It is demonstrated that this treatment enhances surface wetting and coverage of the BCP. The modified brushes also enable DSA of the BCP on topographically patterned substrates. UV-O3 exposure was also used to reveal the BCP structure and provide an in situ {"}hard mask{"} for pattern transfer to the substrate.",
author = "Dipu Borah and Sozaraj Rasappa and Ramsankar Senthamaraikannan and Holmes, {Justin D.} and Morris, {Michael A.}",
year = "2013",
month = "7",
day = "16",
doi = "10.1021/la401561k",
language = "English",
volume = "29",
pages = "8959--8968",
journal = "Langmuir",
issn = "0743-7463",
publisher = "AMER CHEMICAL SOC",
number = "28",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Tuning PDMS brush chemistry by UV-O3 exposure for PS-b-PDMS microphase separation and directed self-assembly

AU - Borah, Dipu

AU - Rasappa, Sozaraj

AU - Senthamaraikannan, Ramsankar

AU - Holmes, Justin D.

AU - Morris, Michael A.

PY - 2013/7/16

Y1 - 2013/7/16

N2 - The directed self-assembly (DSA) of block copolymer (BCP) thin films could enable a scalable, bottom-up alternative to photolithography for the generation of substrate features. The PS-b-PDMS (polystyrene-b-polydimethylsiloxane) system is attractive as it can be extended toward very small feature sizes as well as having two blocks that can be readily differentiated during pattern transfer. However, PS-b-PDMS offers a considerable challenge because of the chemical differences in the blocks which lead to poor surface-wetting, poor pattern orientation control, and structural instabilities. These challenges can be mitigated by careful definition of the interface chemistry between the substrate and the BCP. Here, we report controlled pattern formation in cylinder forming PS-b-PDMS system by use of a carefully controlled PDMS brush. Control of the brush was achieved using exposure to UV-O3 for varying time. It is demonstrated that this treatment enhances surface wetting and coverage of the BCP. The modified brushes also enable DSA of the BCP on topographically patterned substrates. UV-O3 exposure was also used to reveal the BCP structure and provide an in situ "hard mask" for pattern transfer to the substrate.

AB - The directed self-assembly (DSA) of block copolymer (BCP) thin films could enable a scalable, bottom-up alternative to photolithography for the generation of substrate features. The PS-b-PDMS (polystyrene-b-polydimethylsiloxane) system is attractive as it can be extended toward very small feature sizes as well as having two blocks that can be readily differentiated during pattern transfer. However, PS-b-PDMS offers a considerable challenge because of the chemical differences in the blocks which lead to poor surface-wetting, poor pattern orientation control, and structural instabilities. These challenges can be mitigated by careful definition of the interface chemistry between the substrate and the BCP. Here, we report controlled pattern formation in cylinder forming PS-b-PDMS system by use of a carefully controlled PDMS brush. Control of the brush was achieved using exposure to UV-O3 for varying time. It is demonstrated that this treatment enhances surface wetting and coverage of the BCP. The modified brushes also enable DSA of the BCP on topographically patterned substrates. UV-O3 exposure was also used to reveal the BCP structure and provide an in situ "hard mask" for pattern transfer to the substrate.

UR - http://www.scopus.com/inward/record.url?scp=84880308592&partnerID=8YFLogxK

U2 - 10.1021/la401561k

DO - 10.1021/la401561k

M3 - Article

VL - 29

SP - 8959

EP - 8968

JO - Langmuir

JF - Langmuir

SN - 0743-7463

IS - 28

ER -