Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells
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Yksityiskohdat
| Alkuperäiskieli | Englanti |
|---|---|
| Sivut | 60-63 |
| Julkaisu | Journal of Crystal Growth |
| Vuosikerta | 425 |
| DOI - pysyväislinkit | |
| Tila | Julkaistu - 1 syyskuuta 2015 |
| OKM-julkaisutyyppi | A1 Alkuperäisartikkeli |
Tiivistelmä
The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.