Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells
Tutkimustuotos › › vertaisarvioitu
Yksityiskohdat
Alkuperäiskieli | Englanti |
---|---|
Sivut | 60-63 |
Julkaisu | Journal of Crystal Growth |
Vuosikerta | 425 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 1 syyskuuta 2015 |
OKM-julkaisutyyppi | A1 Alkuperäisartikkeli |
Tiivistelmä
The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.