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Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversion

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Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut1897-1907
Sivumäärä10
JulkaisuIEEE Transactions on Circuits and Systems. Part 1: Regular Papers
Vuosikerta66
Numero5
Varhainen verkossa julkaisun päivämäärä4 tammikuuta 2019
DOI - pysyväislinkit
TilaJulkaistu - 5 toukokuuta 2019
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

This paper describes analysis of nonlinear effects in a MOS transistor operating in moderate inversion and saturation. The dependence of the drain current on the gate-source and drain-source voltages is described using a modified version of the ``reconciliation'' model developed by Y. Tsividis. In the new model, the current components, which correspond to the terms depending exponentially on normalized gate-source or drain-source modulating sinusoidal voltages, are presented using modified Bessel functions. This approach allows one to find the first, second, and third harmonics of the drain current caused by the gate-source or drain-source voltage sinusoidal modulation and find also the intermodulation terms produced by these two modulating voltages. The results are applied to set the requirements to the gate-source and drain-source bias voltages in design of low-distortion and/or low-voltage amplifiers. It is shown that the realization of the stage with the zero value of third-order harmonic requires extremely tight tolerances for the threshold voltage. The suppression of intermodulation terms requires increased drain-source voltage. These recommendations are confirmed by simulations.

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