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ZnSe-based light emitters grown on wide-gap III-V buffer layers

Tutkimustuotos

Standard

ZnSe-based light emitters grown on wide-gap III-V buffer layers. / Uusimaa, P.; Salokatve, A.; Savolainen, P.; Rinta-Möykky, A.; Pessa, M.; Souifi, A.; Adhiri, R.; Kiriakidis, G.; Moschovis, K.; Stoimenos, J.

Physics and Simulation of Optoelectronic Devices VI. Photonics West-conference, San Jose, USA, January 26-30, 1998. Proceedings of SPIE. toim. / M. Osinski. San Jose, California, USA, 1998. s. 39-50.

Tutkimustuotos

Harvard

Uusimaa, P, Salokatve, A, Savolainen, P, Rinta-Möykky, A, Pessa, M, Souifi, A, Adhiri, R, Kiriakidis, G, Moschovis, K & Stoimenos, J 1998, ZnSe-based light emitters grown on wide-gap III-V buffer layers. julkaisussa M Osinski (Toimittaja), Physics and Simulation of Optoelectronic Devices VI. Photonics West-conference, San Jose, USA, January 26-30, 1998. Proceedings of SPIE. San Jose, California, USA, Sivut 39-50.

APA

Uusimaa, P., Salokatve, A., Savolainen, P., Rinta-Möykky, A., Pessa, M., Souifi, A., ... Stoimenos, J. (1998). ZnSe-based light emitters grown on wide-gap III-V buffer layers. teoksessa M. Osinski (Toimittaja), Physics and Simulation of Optoelectronic Devices VI. Photonics West-conference, San Jose, USA, January 26-30, 1998. Proceedings of SPIE (Sivut 39-50). San Jose, California, USA.

Vancouver

Uusimaa P, Salokatve A, Savolainen P, Rinta-Möykky A, Pessa M, Souifi A et al. ZnSe-based light emitters grown on wide-gap III-V buffer layers. julkaisussa Osinski M, toimittaja, Physics and Simulation of Optoelectronic Devices VI. Photonics West-conference, San Jose, USA, January 26-30, 1998. Proceedings of SPIE. San Jose, California, USA. 1998. s. 39-50

Author

Uusimaa, P. ; Salokatve, A. ; Savolainen, P. ; Rinta-Möykky, A. ; Pessa, M. ; Souifi, A. ; Adhiri, R. ; Kiriakidis, G. ; Moschovis, K. ; Stoimenos, J. / ZnSe-based light emitters grown on wide-gap III-V buffer layers. Physics and Simulation of Optoelectronic Devices VI. Photonics West-conference, San Jose, USA, January 26-30, 1998. Proceedings of SPIE. Toimittaja / M. Osinski. San Jose, California, USA, 1998. Sivut 39-50

Bibtex - Lataa

@inproceedings{70bb28e84c964f87ae766e7c300f5a57,
title = "ZnSe-based light emitters grown on wide-gap III-V buffer layers",
author = "P. Uusimaa and A. Salokatve and P. Savolainen and A. Rinta-M{\"o}ykky and M. Pessa and A. Souifi and R. Adhiri and G. Kiriakidis and K. Moschovis and J. Stoimenos",
note = "Invited lecture<br/>Contribution: organisation=fys orc,FACT1=1",
year = "1998",
language = "English",
pages = "39--50",
editor = "M. Osinski",
booktitle = "Physics and Simulation of Optoelectronic Devices VI. Photonics West-conference, San Jose, USA, January 26-30, 1998. Proceedings of SPIE",

}

RIS (suitable for import to EndNote) - Lataa

TY - GEN

T1 - ZnSe-based light emitters grown on wide-gap III-V buffer layers

AU - Uusimaa, P.

AU - Salokatve, A.

AU - Savolainen, P.

AU - Rinta-Möykky, A.

AU - Pessa, M.

AU - Souifi, A.

AU - Adhiri, R.

AU - Kiriakidis, G.

AU - Moschovis, K.

AU - Stoimenos, J.

N1 - Invited lecture<br/>Contribution: organisation=fys orc,FACT1=1

PY - 1998

Y1 - 1998

M3 - Conference contribution

SP - 39

EP - 50

BT - Physics and Simulation of Optoelectronic Devices VI. Photonics West-conference, San Jose, USA, January 26-30, 1998. Proceedings of SPIE

A2 - Osinski, M.

CY - San Jose, California, USA

ER -